H5TC4G63AFR-PBI vs K4B4G1646E-BYMA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63AFR-PBI disebabkan oleh SK hynix dan K4B4G1646E-BYMA disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5TC4G63AFR-PBI | K4B4G1646E-BYMA |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Harga Unit (USD) | — | $14.32 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Organisasi | 256M x 16 | 256M x 16 |
| Total Memory Size | 4 Gb | — |
| Kadar Data | DDR3-1600 (PC3L-12800) | 1866 Mbps/pin |
| Tegangan Pemberi Arus | 1.35 V | 1.35 V (1.28 V to 1.575 V) |
| Number of Banks | 8 | — |
| Burst Length | 8 (BL8) | [DATA_NEEDED: Burst Length] |
| Latensi CAS | Programmable | [DATA_NEEDED: CAS Latency] |
| On-Die Termination (ODT) | Yes | — |
| Refresh Period | 7.8 us at 85°C | — |
| Gambaran Suhu Operasi | -40°C to +95°C | — |
| Kemasan | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) | FBGA-96 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Number of Terminals | 96 | — |
| Status RoHS | Compliant | — |
| Density | — | 4 Gb |
| Clock Frequency | — | 933 MHz |
| Suhu Operasi | — | 0°C to +95°C |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| RoHS | — | Compliant |
| Bilangan Pin | — | 96 |