IAUCN08S7L018ATMA1 vs IAUCN10S5L280DATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN08S7L018ATMA1 sa pamamagitan ng Infineon at IAUCN10S5L280DATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN08S7L018ATMA1 - 80V 1.8mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L018ATMA1 ✓ NakahandaInfineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN08S7L018ATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 5 |
| Technology | N-Channel Trench MOSFET | OptiMOS 5 Trench MOSFET |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tj | 210 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc] | — |
| Maximum RDS(on) at VGS=10 V | 1.8 mΩ | — |
| Power Dissipation (PD) at Tc=25 °C | 169 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | -55C to +175C (junction) |
| Packhaging | PG-TDSON-8-43 (5x6 mm) | PG-TDSON-8-61 (SSO8) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Qualification | Automotive (per Infineon part description) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| Level ng MSL | [DATA_NEEDED: MSL level] | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tj | — | 23 A |
| Power Dissipation (Pd) at Tc | — | 38 W |
| Automotive Qualified | — | Yes (AEC-Q101, IAU prefix) |
| Bilang ng Pin | — | 8 |
| Packing | — | Tape & Reel (T&R) |