IAUCN08S7L018ATMA1 vs IAUCN10S5L280DATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN08S7L018ATMA1 dari Infineon dan IAUCN10S5L280DATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN08S7L018ATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 5 |
| Technology | N-Channel Trench MOSFET | OptiMOS 5 Trench MOSFET |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tj | 210 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc] | — |
| Maximum RDS(on) at VGS=10 V | 1.8 mΩ | — |
| Power Dissipation (PD) at Tc=25 °C | 169 W | — |
| Rentang Suhu Kerja | -55 °C to +175 °C | -55C to +175C (junction) |
| Paket | PG-TDSON-8-43 (5x6 mm) | PG-TDSON-8-61 (SSO8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Qualification | Automotive (per Infineon part description) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| Level MSL | [DATA_NEEDED: MSL level] | 1 |
| Status RoHS | Compliant | Compliant |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tj | — | 23 A |
| Power Dissipation (Pd) at Tc | — | 38 W |
| Automotive Qualified | — | Yes (AEC-Q101, IAU prefix) |
| Jumlah Pin | — | 8 |
| Packing | — | Tape & Reel (T&R) |