IAUCN08S7L018ATMA1 vs IAUCN10S5L280DATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7L018ATMA1 disebabkan oleh Infineon dan IAUCN10S5L280DATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUCN08S7L018ATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 5 |
| Technology | N-Channel Trench MOSFET | OptiMOS 5 Trench MOSFET |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tj | 210 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc] | — |
| Maximum RDS(on) at VGS=10 V | 1.8 mΩ | — |
| Power Dissipation (PD) at Tc=25 °C | 169 W | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C | -55C to +175C (junction) |
| Kemasan | PG-TDSON-8-43 (5x6 mm) | PG-TDSON-8-61 (SSO8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Qualification | Automotive (per Infineon part description) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| Aras MSL | [DATA_NEEDED: MSL level] | 1 |
| Status RoHS | Compliant | Compliant |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tj | — | 23 A |
| Power Dissipation (Pd) at Tc | — | 38 W |
| Automotive Qualified | — | Yes (AEC-Q101, IAU prefix) |
| Kiraan Pin | — | 8 |
| Packing | — | Tape & Reel (T&R) |