IPB200N25N3GATMA1 vs IPB120P04P4L03ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB200N25N3GATMA1 disebabkan oleh Infineon dan IPB120P04P4L03ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB200N25N3GATMA1 IPB120P04P4L03ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS 3 —
Jenis Transistor N-Channel MOSFET —
Kemasan PG-TO263-3 (D2PAK) PG-TO263-3-2 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Drain-Source Voltage (V_DS) 250 V —
Continuous Drain Current (I_D) at T_C 64 A —
Power Dissipation (P_D) at T_C 300 W —
R_DS(on) max at V_GS=10V 20 mOhm —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical/max] —
Technology OptiMOS 3 (Trench) —
Gate Charge (Q_g) [DATA_NEEDED: Q_g typical] —
Gambaran Suhu Operasi -55C to +175C —
Status RoHS Compliant Compliant (per Infineon product page)
Boson Bebas Yes (per Infineon OptiMOS family datasheet) —
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Kiraan Pin 3 (2+tab) 3 (Gate, Drain, Source)
Transistor Polarity — P-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25C) — 120 A
Power Dissipation (PD, Tc=25C) — 136 W
On-Resistance (RDS(on)) — 3.1 mΩ (typ, per Infineon summary)
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Suhu Hubungan Operasi — -55C to +175C
Technology Family — OptiMOS-P2
Configuration — Single P-Channel MOSFET

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