IPB200N25N3GATMA1 vs IPB120P04P4L03ATMA2 Perbandingan
Perbandingan bersamaan detil IPB200N25N3GATMA1 dari Infineon dan IPB120P04P4L03ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPB200N25N3GATMA1 | IPB120P04P4L03ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 3 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Paket | PG-TO263-3 (D2PAK) | PG-TO263-3-2 (D2PAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Drain-Source Voltage (V_DS) | 250 V | — |
| Continuous Drain Current (I_D) at T_C | 64 A | — |
| Power Dissipation (P_D) at T_C | 300 W | — |
| R_DS(on) max at V_GS=10V | 20 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/max] | — |
| Technology | OptiMOS 3 (Trench) | — |
| Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical] | — |
| Rentang Suhu Kerja | -55C to +175C | — |
| Status RoHS | Compliant | Compliant (per Infineon product page) |
| Bebas Halogen | Yes (per Infineon OptiMOS family datasheet) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Jumlah Pin | 3 (2+tab) | 3 (Gate, Drain, Source) |
| Transistor Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25C) | — | 120 A |
| Power Dissipation (PD, Tc=25C) | — | 136 W |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Suhu Hubung Kerja | — | -55C to +175C |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |