IPB200N25N3GATMA1 vs IPB120P04P4L03ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB200N25N3GATMA1 sa pamamagitan ng Infineon at IPB120P04P4L03ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB200N25N3GATMA1 - 250V 64A OptiMOS 3 N-Ch MOSFET | Infineon
IPB200N25N3GATMA1 ✓ NakahandaInfineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB200N25N3GATMA1 | IPB120P04P4L03ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 3 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Packhaging | PG-TO263-3 (D2PAK) | PG-TO263-3-2 (D2PAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Drain-Source Voltage (V_DS) | 250 V | — |
| Continuous Drain Current (I_D) at T_C | 64 A | — |
| Power Dissipation (P_D) at T_C | 300 W | — |
| R_DS(on) max at V_GS=10V | 20 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/max] | — |
| Technology | OptiMOS 3 (Trench) | — |
| Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical] | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | — |
| Tindminan RoHS | Compliant | Compliant (per Infineon product page) |
| Wala sa Halogen | Yes (per Infineon OptiMOS family datasheet) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Bilang ng Pin | 3 (2+tab) | 3 (Gate, Drain, Source) |
| Transistor Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25C) | — | 120 A |
| Power Dissipation (PD, Tc=25C) | — | 136 W |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |