IPD30N06S215ATMA2 vs IPD90N06S404ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD30N06S215ATMA2 sa pamamagitan ng Infineon at IPD90N06S404ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPD30N06S215ATMA2 | IPD90N06S404ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS Power MOSFET | — |
| Uri ng Transistor | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 55 V | 60 V |
| Continuous Drain Current (ID, Tc) | 30 A | 90 A |
| Power Dissipation (PD, Tc) | 136 W | 150 W |
| Packhaging / Kaso | PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55 C to +175 C (junction) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Level ng MSL | MSL1 (up to 260 C peak reflow) | MSL1 |
| Avalanche Tested | 100% avalanche tested | — |
| Lead-Free / RoHS | Green package (lead free), RoHS compliant | — |
| Gate Threshold Type | Logic-level compatible | — |
| Packing | Tape & Reel (T/R) | — |
| FET Type | — | N-Channel, Enhancement Mode |
| On-Resistance (RDS(on)) | — | 3.8 mΩ (typ) at VGS = 10 V |
| Packhaging | — | PG-TO252-3-11 (DPAK), 3-pin surface mount |
| Operating Temperature (TJ max) | — | 175 °C |
| Peak Reflow Temperature | — | 260 °C (MSL1) |
| Avalanche Rating | — | 100% Avalanche Tested |
| Technology | — | OptiMOS |
| Tindminan RoHS | — | Compliant (Green Product) |
| Polarity | — | Single N-Channel |