IPD30N06S215ATMA2 vs IPD90N06S404ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD30N06S215ATMA2 disebabkan oleh Infineon dan IPD90N06S404ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD30N06S215ATMA2 | IPD90N06S404ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS Power MOSFET | — |
| Jenis Transistor | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 55 V | 60 V |
| Continuous Drain Current (ID, Tc) | 30 A | 90 A |
| Power Dissipation (PD, Tc) | 136 W | 150 W |
| Kemasan / Case | PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55 C to +175 C (junction) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Aras MSL | MSL1 (up to 260 C peak reflow) | MSL1 |
| Avalanche Tested | 100% avalanche tested | — |
| Lead-Free / RoHS | Green package (lead free), RoHS compliant | — |
| Gate Threshold Type | Logic-level compatible | — |
| Packing | Tape & Reel (T/R) | — |
| FET Type | — | N-Channel, Enhancement Mode |
| On-Resistance (RDS(on)) | — | 3.8 mΩ (typ) at VGS = 10 V |
| Kemasan | — | PG-TO252-3-11 (DPAK), 3-pin surface mount |
| Operating Temperature (TJ max) | — | 175 °C |
| Peak Reflow Temperature | — | 260 °C (MSL1) |
| Avalanche Rating | — | 100% Avalanche Tested |
| Technology | — | OptiMOS |
| Status RoHS | — | Compliant (Green Product) |
| Polarity | — | Single N-Channel |