IPD30N06S215ATMA2 vs IPD90N06S404ATMA2 比較

詳細並排比較 IPD30N06S215ATMA2 由 Infineon 與 IPD90N06S404ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD30N06S215ATMA2 IPD30N06S215ATMA2 - 55V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N06S215ATMA2 - 55V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N06S215ATMA2 ✓ 啟用中
Infineon
IPD90N06S404ATMA2 IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon

IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon

IPD90N06S404ATMA2 ✓ 啟用中

規格比較

參數 IPD30N06S215ATMA2 IPD90N06S404ATMA2
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Family OptiMOS Power MOSFET —
電晶體類型 N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 55 V 60 V
Continuous Drain Current (ID, Tc) 30 A 90 A
Power Dissipation (PD, Tc) 136 W 150 W
封裝 / 外殼 PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) —
安裝類型 Surface Mount Surface Mount
工作溫度 -55 C to +175 C (junction) —
Automotive Qualification AEC-Q101 qualified AEC-Q101
MSL 等級 MSL1 (up to 260 C peak reflow) MSL1
Avalanche Tested 100% avalanche tested —
Lead-Free / RoHS Green package (lead free), RoHS compliant —
Gate Threshold Type Logic-level compatible —
Packing Tape & Reel (T/R) —
FET Type — N-Channel, Enhancement Mode
On-Resistance (RDS(on)) — 3.8 mΩ (typ) at VGS = 10 V
封裝 — PG-TO252-3-11 (DPAK), 3-pin surface mount
Operating Temperature (TJ max) — 175 °C
Peak Reflow Temperature — 260 °C (MSL1)
Avalanche Rating — 100% Avalanche Tested
Technology — OptiMOS
RoHS 狀態 — Compliant (Green Product)
Polarity — Single N-Channel

資料表與資源

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