IPD30N06S215ATMA2 vs IPD90N06S404ATMA2 Perbandingan
Perbandingan bersamaan detil IPD30N06S215ATMA2 dari Infineon dan IPD90N06S404ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD30N06S215ATMA2 | IPD90N06S404ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS Power MOSFET | — |
| Tipe Transistor | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 55 V | 60 V |
| Continuous Drain Current (ID, Tc) | 30 A | 90 A |
| Power Dissipation (PD, Tc) | 136 W | 150 W |
| Paket / Case | PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55 C to +175 C (junction) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Level MSL | MSL1 (up to 260 C peak reflow) | MSL1 |
| Avalanche Tested | 100% avalanche tested | — |
| Lead-Free / RoHS | Green package (lead free), RoHS compliant | — |
| Gate Threshold Type | Logic-level compatible | — |
| Packing | Tape & Reel (T/R) | — |
| FET Type | — | N-Channel, Enhancement Mode |
| On-Resistance (RDS(on)) | — | 3.8 mΩ (typ) at VGS = 10 V |
| Paket | — | PG-TO252-3-11 (DPAK), 3-pin surface mount |
| Operating Temperature (TJ max) | — | 175 °C |
| Peak Reflow Temperature | — | 260 °C (MSL1) |
| Avalanche Rating | — | 100% Avalanche Tested |
| Technology | — | OptiMOS |
| Status RoHS | — | Compliant (Green Product) |
| Polarity | — | Single N-Channel |