IPG16N10S4L61AATMA1 vs IPG16N10S461AATMA1 Comparison

Detailed side-by-side comparison of IPG16N10S4L61AATMA1 by Infineon and IPG16N10S461AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPG16N10S4L61AATMA1 IPG16N10S461AATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type Dual N-Channel (Array) —
Technology Logic-Level, Enhancement Mode OptiMOS™ trench
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at 25C 16 A —
Power Dissipation (PD) 29 W —
Package / Case PG-TDSON-8-10 (Wettable Flank) —
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +175C (TJ) —
Moisture Sensitivity Level (MSL) MSL1 (unlimited floor life at <30C / 85% RH) —
Peak Reflow Temperature 260 C —
AEC-Q101 Qualification Qualified (automotive grade) —
RoHS Compliance Compliant (Green Product) —
Avalanche Tested 100% (per datasheet) —
AOI Compatible Yes (Wettable Flank) —
FET Feature Logic Level Gate —
Manufacturer — Infineon Technologies
Product Type — Dual N-Channel MOSFET Array
Continuous Drain Current (ID) — 16 A
On-Resistance R_DS(on) typ. — 61 mΩ
Total Power Dissipation (Ptot) — 29 W (T_C = 25°C)
Configuration — 2 N-Channel (Dual, separate)
Gate Threshold Voltage V_GS(th) typ. — [DATA_NEEDED: gate threshold voltage]
Maximum Junction Temperature — 175 °C
Operating Temperature Range — -55 °C to +175 °C
Package — PG-TDSON-8-10 (Wettable Flank)
Terminal Count — 8
MSL Level — [DATA_NEEDED: MSL rating]
RoHS Status — Compliant
Built-in Body Diode — Yes
Channel Mode — Enhancement

Datasheets & Resources

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