IPG16N10S4L61AATMA1 vs IPG16N10S461AATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG16N10S4L61AATMA1 disebabkan oleh Infineon dan IPG16N10S461AATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPG16N10S4L61AATMA1 IPG16N10S461AATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type Dual N-Channel (Array) —
Technology Logic-Level, Enhancement Mode OptiMOS™ trench
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at 25C 16 A —
Power Dissipation (PD) 29 W —
Kemasan / Case PG-TDSON-8-10 (Wettable Flank) —
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +175C (TJ) —
Tingkat sensitiviti Air Nama (MSL) MSL1 (unlimited floor life at <30C / 85% RH) —
Peak Reflow Temperature 260 C —
AEC-Q101 Qualification Qualified (automotive grade) —
RoHS Compliance Compliant (Green Product) —
Avalanche Tested 100% (per datasheet) —
AOI Compatible Yes (Wettable Flank) —
FET Feature Logic Level Gate —
Manufacturer — Infineon Technologies
Product Type — Dual N-Channel MOSFET Array
Continuous Drain Current (ID) — 16 A
On-Resistance R_DS(on) typ. — 61 mΩ
Total Power Dissipation (Ptot) — 29 W (T_C = 25°C)
Configuration — 2 N-Channel (Dual, separate)
Gate Threshold Voltage V_GS(th) typ. — [DATA_NEEDED: gate threshold voltage]
Maximum Junction Temperature — 175 °C
Gambaran Suhu Operasi — -55 °C to +175 °C
Kemasan — PG-TDSON-8-10 (Wettable Flank)
Terminal Count — 8
Aras MSL — [DATA_NEEDED: MSL rating]
Status RoHS — Compliant
Built-in Body Diode — Yes
Channel Mode — Enhancement

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