IPG16N10S4L61AATMA1 vs IPG16N10S461AATMA1 Perbandingan

Perbandingan bersamaan detil IPG16N10S4L61AATMA1 dari Infineon dan IPG16N10S461AATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPG16N10S4L61AATMA1 IPG16N10S461AATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type Dual N-Channel (Array) —
Technology Logic-Level, Enhancement Mode OptiMOS™ trench
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at 25C 16 A —
Power Dissipation (PD) 29 W —
Paket / Case PG-TDSON-8-10 (Wettable Flank) —
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +175C (TJ) —
Tingkat Sensitivitas Kekeringan (MSL) MSL1 (unlimited floor life at <30C / 85% RH) —
Peak Reflow Temperature 260 C —
AEC-Q101 Qualification Qualified (automotive grade) —
RoHS Compliance Compliant (Green Product) —
Avalanche Tested 100% (per datasheet) —
AOI Compatible Yes (Wettable Flank) —
FET Feature Logic Level Gate —
Manufacturer — Infineon Technologies
Product Type — Dual N-Channel MOSFET Array
Continuous Drain Current (ID) — 16 A
On-Resistance R_DS(on) typ. — 61 mΩ
Total Power Dissipation (Ptot) — 29 W (T_C = 25°C)
Configuration — 2 N-Channel (Dual, separate)
Gate Threshold Voltage V_GS(th) typ. — [DATA_NEEDED: gate threshold voltage]
Maximum Junction Temperature — 175 °C
Rentang Suhu Kerja — -55 °C to +175 °C
Paket — PG-TDSON-8-10 (Wettable Flank)
Terminal Count — 8
Level MSL — [DATA_NEEDED: MSL rating]
Status RoHS — Compliant
Built-in Body Diode — Yes
Channel Mode — Enhancement

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