IPN95R1K2P7ATMA1 vs STF13N95K3 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPN95R1K2P7ATMA1 disebabkan oleh Infineon dan STF13N95K3 disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPN95R1K2P7ATMA1 STF13N95K3
Merek Infineon STMicroelectronics
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology CoolMOS P7 (Super Junction) —
Drain-to-Source Voltage (V_DSS) 950 V —
Continuous Drain Current (I_D) at T_C 6 A —
Maximum On-Resistance R_DS(on) at V_GS=10V 1200 mOhm (1.2 Ohm) —
Gate Drive Voltage (max R_DS(on)) 10 V —
Power Dissipation (T_C) 7 W —
Kemasan SOT-223-3 (PG-SOT223) TO-220FP
Jenis Pemasangan Surface Mount Through Hole
Kiraan Pin 3 (2 + Tab) —
Series CoolMOS P7 —
Gambaran Suhu Operasi -55C to +150C -55°C to +150°C
Packaging Tape & Reel —
Status RoHS Compliant Compliant
Part Status Active —
Polarity — N-Channel
Drain-Source Breakdown Voltage (BVdss) — 950 V
Continuous Drain Current (ID) at 25°C — 13 A
Continuous Drain Current (ID) at 100°C — 8.2 A
Pulsed Drain Current (IDM) — 39 A
On-Resistance (RDS(on)) at VGS=10V — 0.55 ohm (typical)
Gate-Source Threshold Voltage (VGS(th)) — 3 V to 5 V
Gate Charge (Qg) — 45 nC
Input Capacitance (Ciss) — 1900 pF
Output Capacitance (Coss) — 120 pF
Reverse Transfer Capacitance (Crss) — 10 pF
Avalanche Energy (EAS) — 400 mJ
Boson Bebas — Yes

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