IPN95R1K2P7ATMA1 vs STF13N95K3 Perbandingan

Perbandingan bersamaan detil IPN95R1K2P7ATMA1 dari Infineon dan STF13N95K3 dari STMicroelectronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPN95R1K2P7ATMA1 STF13N95K3
Merek Infineon STMicroelectronics
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology CoolMOS P7 (Super Junction) —
Drain-to-Source Voltage (V_DSS) 950 V —
Continuous Drain Current (I_D) at T_C 6 A —
Maximum On-Resistance R_DS(on) at V_GS=10V 1200 mOhm (1.2 Ohm) —
Gate Drive Voltage (max R_DS(on)) 10 V —
Power Dissipation (T_C) 7 W —
Paket SOT-223-3 (PG-SOT223) TO-220FP
Tipe Mounting Surface Mount Through Hole
Jumlah Pin 3 (2 + Tab) —
Series CoolMOS P7 —
Rentang Suhu Kerja -55C to +150C -55°C to +150°C
Packaging Tape & Reel —
Status RoHS Compliant Compliant
Part Status Active —
Polarity — N-Channel
Drain-Source Breakdown Voltage (BVdss) — 950 V
Continuous Drain Current (ID) at 25°C — 13 A
Continuous Drain Current (ID) at 100°C — 8.2 A
Pulsed Drain Current (IDM) — 39 A
On-Resistance (RDS(on)) at VGS=10V — 0.55 ohm (typical)
Gate-Source Threshold Voltage (VGS(th)) — 3 V to 5 V
Gate Charge (Qg) — 45 nC
Input Capacitance (Ciss) — 1900 pF
Output Capacitance (Coss) — 120 pF
Reverse Transfer Capacitance (Crss) — 10 pF
Avalanche Energy (EAS) — 400 mJ
Bebas Halogen — Yes

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