IPP600N25N3GXKSA1 vs IRF640NPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP600N25N3GXKSA1 disebabkan oleh Infineon dan IRF640NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPP600N25N3GXKSA1 | IRF640NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon (formerly International Rectifier) |
| Series | OptiMOS 3 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | HEXFET (5th Generation) |
| Drain-to-Source Voltage (VDS) | 250 V | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 25 A | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 60 mOhm at VGS=10V | — |
| Power Dissipation (PD) at Tc=25C | 136 W | 150 W |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Kemasan / Case | TO-220-3 (PG-TO220-3-1) | — |
| Jenis Pemasangan | Through Hole | Through Hole |
| Gambaran Suhu Operasi | -55C to +175C (junction) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | 44.7 nC |
| Reverse Recovery Time (trr) | [DATA_NEEDED: trr typical value] | — |
| Lead Free Status | Lead Free / RoHS Compliant | — |
| Kiraan Pin | 3 (Gate, Drain, Source) | — |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Suhu Hubungan Operasi | — | -55C to +150C |
| Jenis Transistor | — | N-Channel Enhancement Mode |
| Kemasan | — | TO-220AB (through-hole, 3-pin) |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes (PBF suffix) |