IPP600N25N3GXKSA1 vs IRF640NPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPP600N25N3GXKSA1 tarafından Infineon ve IRF640NPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IPP600N25N3GXKSA1 | IRF640NPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon (formerly International Rectifier) |
| Series | OptiMOS 3 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | HEXFET (5th Generation) |
| Drain-to-Source Voltage (VDS) | 250 V | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 25 A | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 60 mOhm at VGS=10V | — |
| Power Dissipation (PD) at Tc=25C | 136 W | 150 W |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Paket / Kas | TO-220-3 (PG-TO220-3-1) | — |
| Montaj Türü | Through Hole | Through Hole |
| İşletim Sıcaklığı Aralığı | -55C to +175C (junction) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | 44.7 nC |
| Reverse Recovery Time (trr) | [DATA_NEEDED: trr typical value] | — |
| Lead Free Status | Lead Free / RoHS Compliant | — |
| Pin Sayısı | 3 (Gate, Drain, Source) | — |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| İşletim Jant Sıcaklığı | — | -55C to +150C |
| Transistor Türü | — | N-Channel Enhancement Mode |
| Paket | — | TO-220AB (through-hole, 3-pin) |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| RoHS Durumu | — | Compliant |
| Lead-Free | — | Yes (PBF suffix) |