IPP600N25N3GXKSA1 vs IRF640NPBF Perbandingan
Perbandingan bersamaan detil IPP600N25N3GXKSA1 dari Infineon dan IRF640NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPP600N25N3GXKSA1 | IRF640NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon (formerly International Rectifier) |
| Series | OptiMOS 3 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | HEXFET (5th Generation) |
| Drain-to-Source Voltage (VDS) | 250 V | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 25 A | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 60 mOhm at VGS=10V | — |
| Power Dissipation (PD) at Tc=25C | 136 W | 150 W |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Paket / Case | TO-220-3 (PG-TO220-3-1) | — |
| Tipe Mounting | Through Hole | Through Hole |
| Rentang Suhu Kerja | -55C to +175C (junction) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | 44.7 nC |
| Reverse Recovery Time (trr) | [DATA_NEEDED: trr typical value] | — |
| Lead Free Status | Lead Free / RoHS Compliant | — |
| Jumlah Pin | 3 (Gate, Drain, Source) | — |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Suhu Hubung Kerja | — | -55C to +150C |
| Tipe Transistor | — | N-Channel Enhancement Mode |
| Paket | — | TO-220AB (through-hole, 3-pin) |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes (PBF suffix) |