IPT015N10NF2SATMA1 vs IPP100N12S305AKSA1 Perbandingan
Perbandingan bersamaan detil IPT015N10NF2SATMA1 dari Infineon dan IPP100N12S305AKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPT015N10NF2SATMA1 | IPP100N12S305AKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID, Tc) | 315 A | — |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| Rentang Suhu Kerja | -55 °C to +175 °C | — |
| Paket | PG-HSOF-8-10 (9-pin, 8+tab) | TO-220 (PG-TO220-3-1) |
| Tipe Mounting | Surface Mount | Through Hole |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS trench |
| Gate Drive Voltage (typ) | 10 V | — |
| Energi Pulsa Tandai | [DATA_NEEDED: EAS value] | — |
| Status RoHS | Compliant | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Arus Kedip Pengecor | — | [DATA_NEEDED: pulsed ID value] |
| Maximum Power Dissipation (Ptot) at Tc | — | 300 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Avalanche Energy, Single Pulse | — | [DATA_NEEDED: EAS] |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Jumlah Pin | — | 3 |
| MSL Moisture Sensitivity Level | — | 1 (260 °C peak reflow) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Tested | — | 100% tested |
| RoHS Compliance | — | Compliant (Green product) |