IPT015N10NF2SATMA1 vs IPP100N12S305AKSA1 比較
詳細並排比較 IPT015N10NF2SATMA1 由 Infineon 與 IPP100N12S305AKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ 啟用中規格比較
| 參數 | IPT015N10NF2SATMA1 | IPP100N12S305AKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID, Tc) | 315 A | — |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| 工作溫度範圍 | -55 °C to +175 °C | — |
| 封裝 | PG-HSOF-8-10 (9-pin, 8+tab) | TO-220 (PG-TO220-3-1) |
| 安裝類型 | Surface Mount | Through Hole |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS trench |
| Gate Drive Voltage (typ) | 10 V | — |
| 單脈衝突崩能量 | [DATA_NEEDED: EAS value] | — |
| RoHS 狀態 | Compliant | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| 脈衝汲極電流 | — | [DATA_NEEDED: pulsed ID value] |
| Maximum Power Dissipation (Ptot) at Tc | — | 300 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Avalanche Energy, Single Pulse | — | [DATA_NEEDED: EAS] |
| 工作接面溫度 | — | -55 °C to +175 °C |
| 腳位數 | — | 3 |
| MSL Moisture Sensitivity Level | — | 1 (260 °C peak reflow) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Tested | — | 100% tested |
| RoHS Compliance | — | Compliant (Green product) |