IRF1018EPBF vs IRFS7430TRL7PP Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF1018EPBF disebabkan oleh Infineon dan IRFS7430TRL7PP disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF1018EPBF IRFS7430TRL7PP
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $0.38 —
FET Type N-Channel N-Channel
Technology HEXFET (Power MOSFET) —
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) at Tc=25C 79 A —
Rds(on) max at Vgs=10V 8.4 mOhm —
Total Gate Charge (Qg) 46 nC —
Gate Drive Voltage (Vgs) 10 V (optimized; +/-20 V max) —
Power Dissipation (Pd) at Tc=25C 110 W —
Gambaran Suhu Operasi -55 C to +175 C (Tj) —
Kemasan TO-220AB (through-hole, 3-lead) D2PAK (TO-263-7), 7 leads + tab
Jenis Pemasangan Through Hole Surface Mount
Qualification JEDEC (Industrial market) —
Status RoHS Compliant Compliant
Lead-Free (PBF suffix) Yes —
Kiraan Pin 3 (Gate, Drain, Source) —
Manufacturer — Infineon Technologies
Product Family — StrongIRFET
Series — HEXFET
Drain-to-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc=25°C) — 240 A
Continuous Drain Current (I_D, Tc=100°C) — [DATA_NEEDED: ID at Tc=100°C]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: IDM pulse spec]
R_DS(on) max (V_GS=10V) — 1.2 mΩ (per family datasheet); 0.75 mΩ typical
Gate-Source Voltage (V_GS) max — ±20 V
Gate Threshold Voltage (V_GS(th)) — 2.0 V to 3.5 V
Total Gate Charge (Q_g) — 305 nC
Power Dissipation (P_D, Tc=25°C) — 375 W
Suhu Hubungan Operasi — -55°C to +175°C
Single Pulse Avalanche Energy (E_AS) — 1454 mJ (per cross-reference test L=1mH)
Aras MSL — MSL1 (per PartGenie)

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