IRF1018EPBF vs IRFS7430TRL7PP Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF1018EPBF sa pamamagitan ng Infineon at IRFS7430TRL7PP sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRFS7430TRL7PP - 40V 240A StrongIRFET N-Channel MOSFET | Infineon
IRFS7430TRL7PP ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRF1018EPBF | IRFS7430TRL7PP |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $0.38 | — |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (Power MOSFET) | — |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25C | 79 A | — |
| Rds(on) max at Vgs=10V | 8.4 mOhm | — |
| Total Gate Charge (Qg) | 46 nC | — |
| Gate Drive Voltage (Vgs) | 10 V (optimized; +/-20 V max) | — |
| Power Dissipation (Pd) at Tc=25C | 110 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (Tj) | — |
| Packhaging | TO-220AB (through-hole, 3-lead) | D2PAK (TO-263-7), 7 leads + tab |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Qualification | JEDEC (Industrial market) | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free (PBF suffix) | Yes | — |
| Bilang ng Pin | 3 (Gate, Drain, Source) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | StrongIRFET |
| Series | — | HEXFET |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc=25°C) | — | 240 A |
| Continuous Drain Current (I_D, Tc=100°C) | — | [DATA_NEEDED: ID at Tc=100°C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: IDM pulse spec] |
| R_DS(on) max (V_GS=10V) | — | 1.2 mΩ (per family datasheet); 0.75 mΩ typical |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 2.0 V to 3.5 V |
| Total Gate Charge (Q_g) | — | 305 nC |
| Power Dissipation (P_D, Tc=25°C) | — | 375 W |
| Temperature ng Junction na Operasyon | — | -55°C to +175°C |
| Single Pulse Avalanche Energy (E_AS) | — | 1454 mJ (per cross-reference test L=1mH) |
| Level ng MSL | — | MSL1 (per PartGenie) |