IRF1018EPBF vs IRFS7430TRL7PP Perbandingan

Perbandingan bersamaan detil IRF1018EPBF dari Infineon dan IRFS7430TRL7PP dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF1018EPBF IRFS7430TRL7PP
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $0,38 —
FET Type N-Channel N-Channel
Technology HEXFET (Power MOSFET) —
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) at Tc=25C 79 A —
Rds(on) max at Vgs=10V 8.4 mOhm —
Total Gate Charge (Qg) 46 nC —
Gate Drive Voltage (Vgs) 10 V (optimized; +/-20 V max) —
Power Dissipation (Pd) at Tc=25C 110 W —
Rentang Suhu Kerja -55 C to +175 C (Tj) —
Paket TO-220AB (through-hole, 3-lead) D2PAK (TO-263-7), 7 leads + tab
Tipe Mounting Through Hole Surface Mount
Qualification JEDEC (Industrial market) —
Status RoHS Compliant Compliant
Lead-Free (PBF suffix) Yes —
Jumlah Pin 3 (Gate, Drain, Source) —
Manufacturer — Infineon Technologies
Product Family — StrongIRFET
Series — HEXFET
Drain-to-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc=25°C) — 240 A
Continuous Drain Current (I_D, Tc=100°C) — [DATA_NEEDED: ID at Tc=100°C]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: IDM pulse spec]
R_DS(on) max (V_GS=10V) — 1.2 mΩ (per family datasheet); 0.75 mΩ typical
Gate-Source Voltage (V_GS) max — ±20 V
Gate Threshold Voltage (V_GS(th)) — 2.0 V to 3.5 V
Total Gate Charge (Q_g) — 305 nC
Power Dissipation (P_D, Tc=25°C) — 375 W
Suhu Hubung Kerja — -55°C to +175°C
Single Pulse Avalanche Energy (E_AS) — 1454 mJ (per cross-reference test L=1mH)
Level MSL — MSL1 (per PartGenie)

Spek dan Sumber

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