IRFP250MPBF vs IRFP260MPBF Perbandingan

Perbandingan bersamaan detil IRFP250MPBF dari Infineon dan IRFP260MPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFP250MPBF IRFP260MPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $2,55 —
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFP250MPBF —
Tipe Transistor N-Channel MOSFET —
Technology HEXFET (IR MOSFET) MOSFET (Metal Oxide Semiconductor)
Drain-Source Voltage (Vds) 200 V —
Continuous Drain Current (Id) at Tc=25C 30 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] —
Static Drain-Source On-Resistance (RDS(on)) 75 mOhm max @ Vgs=10V —
Gate-Source Threshold Voltage (Vgs(th)) 4 V (typ) —
Total Gate Charge (Qg) 82 nC —
Power Dissipation (Pd) at Tc=25C 214 W —
Suhu Hubung Kerja -55C to +175C —
Paket / Case TO-247AC (3-pin + tab) TO-247AC (3-lead through-hole)
Tipe Mounting Through Hole Through Hole
Jumlah Pin 3 —
Avalanche Rated Yes Yes
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Level MSL 1 (unlimited) Not Applicable (through-hole)
Part Status — Active
FET Type — N-Channel
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at Tc=25C — 50 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 300 W
On-Resistance RDS(on) max — 40 mOhm
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th)]
Input Capacitance Ciss — 1560 pF
Total Gate Charge Qg — [DATA_NEEDED: Qg]
Rentang Suhu Kerja — -55C to +175C

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