K4A8G045WB-BCPB vs K4A8G045WB-BCRC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G045WB-BCPB disebabkan oleh Samsung Electronics dan K4A8G045WB-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K4A8G045WB-BCPB K4A8G045WB-BCPB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps | Samsung

K4A8G045WB-BCPB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps | Samsung

K4A8G045WB-BCPB ✓ Aktif
Samsung Electronics
K4A8G045WB-BCRC K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC ✓ Aktif

Pengandingan Spesifikasi

Parametr K4A8G045WB-BCPB K4A8G045WB-BCRC
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Status Stok In Stock —
Harga Unit (USD) $9.02 —
Jenis Ingatan DDR4 SDRAM (B-die) DDR4 SDRAM
Density 8 Gb 8 Gb
Organisasi 2G x 4 2G x 4
Kadar Data 2133 Mbps/pin (PC4-2133) —
Supply Voltage (VDD) 1.2 V —
Kemasan 78-ball FBGA 78-ball FBGA (PBGA78)
Jenis Pemasangan Surface Mount Surface Mount
Prefetch Architecture 8n —
Burst Length BL8, BC4 (burst chop) —
Refresh Cycles 8192 8192
Refresh Modes Auto-refresh, Self-refresh —
Termination On-Die Termination (ODT) —
Reset Asynchronous Reset —
Clocking Differential clocks (CK/CK#) —
Suhu Operasi 0C to +85C 0 C to 85 C
Max Supply Current 211.7 mA —
Ciri-ciri Posted CAS, Programmable CWL, Internal (Self) Calibration —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Speed — 2400 Mbps
Supply Voltage (VDD/VDDQ) — 1.2 V
Process Technology — Samsung B-die
Antaramuka — CMOS, differential clock (CK/CK#)
Maximum Supply Current — 211.7 mA
Terminals — 78
Key DDR4 Features — Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset
DLL Mode — Timing specified for DLL-enabled operation

Laporan Datasheet & Sumber

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