K4A8G045WB-BCPB vs K4A8G045WB-BCRC Perbandingan

Perbandingan bersamaan detil K4A8G045WB-BCPB dari Samsung Electronics dan K4A8G045WB-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Samsung Electronics
K4A8G045WB-BCPB K4A8G045WB-BCPB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps | Samsung

K4A8G045WB-BCPB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps | Samsung

K4A8G045WB-BCPB ✓ Aktif
Samsung Electronics
K4A8G045WB-BCRC K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum K4A8G045WB-BCPB K4A8G045WB-BCRC
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Status Stok In Stock —
Harga Unit (USD) $9,02 —
Tipe Memori DDR4 SDRAM (B-die) DDR4 SDRAM
Density 8 Gb 8 Gb
Organisasi 2G x 4 2G x 4
Laju Data 2133 Mbps/pin (PC4-2133) —
Supply Voltage (VDD) 1.2 V —
Paket 78-ball FBGA 78-ball FBGA (PBGA78)
Tipe Mounting Surface Mount Surface Mount
Prefetch Architecture 8n —
Burst Length BL8, BC4 (burst chop) —
Refresh Cycles 8192 8192
Refresh Modes Auto-refresh, Self-refresh —
Termination On-Die Termination (ODT) —
Reset Asynchronous Reset —
Clocking Differential clocks (CK/CK#) —
Suhu Kerja 0C to +85C 0 C to 85 C
Max Supply Current 211.7 mA —
Fitur Posted CAS, Programmable CWL, Internal (Self) Calibration —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Speed — 2400 Mbps
Supply Voltage (VDD/VDDQ) — 1.2 V
Process Technology — Samsung B-die
Antarmuka — CMOS, differential clock (CK/CK#)
Maximum Supply Current — 211.7 mA
Terminals — 78
Key DDR4 Features — Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset
DLL Mode — Timing specified for DLL-enabled operation

Spek dan Sumber

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