K4A8G085WB-BIWE vs K4A8G085WB-BCPB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WB-BIWE sa pamamagitan ng Samsung Electronics at K4A8G085WB-BCPB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 1Gx8 1.2V | Samsung
K4A8G085WB-BCPB ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G085WB-BIWE | K4A8G085WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $4.10 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Laki ng Memory | 8 Gb | 8 Gb |
| Memory Organization | 1G x 8 | 1G x 8 |
| Rate ng Data | 3200 Mbps | — |
| Volte ng Pagbibigay | 1.2 V | 1.2 V |
| Temperature na Operasyon | 0°C to +85°C | 0C to +85C |
| Packhaging | 78-FBGA | 78-ball FBGA (BGA78 / TFBGA), rectangular, 11 mm length |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | — |
| Latensya ng CAS | [DATA_NEEDED: CL value] | — |
| Refresh | Auto-refresh, self-refresh | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Max Clock Frequency | — | 1066 MHz |
| Max Access Time | — | 0.18 ns |
| Max Standby Current | — | 0.016 mA |
| Refresh Cycles | — | 8192 |
| Technology | — | CMOS, 8Gb B-die |
| Number of Terminals | — | 78 |
| Interface | — | DDR4 SDRAM parallel interface |
| Operating Temperature Grade | — | Commercial (0C to 85C) |