K4A8G085WB-BIWE vs K4A8G085WB-BCPB Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WB-BIWE disebabkan oleh Samsung Electronics dan K4A8G085WB-BCPB disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G085WB-BIWE | K4A8G085WB-BCPB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $4.10 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Saiz Ingatan | 8 Gb | 8 Gb |
| Memory Organization | 1G x 8 | 1G x 8 |
| Kadar Data | 3200 Mbps | — |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Suhu Operasi | 0°C to +85°C | 0C to +85C |
| Kemasan | 78-FBGA | 78-ball FBGA (BGA78 / TFBGA), rectangular, 11 mm length |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | — |
| Latensi CAS | [DATA_NEEDED: CL value] | — |
| Refresh | Auto-refresh, self-refresh | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Max Clock Frequency | — | 1066 MHz |
| Max Access Time | — | 0.18 ns |
| Max Standby Current | — | 0.016 mA |
| Refresh Cycles | — | 8192 |
| Technology | — | CMOS, 8Gb B-die |
| Number of Terminals | — | 78 |
| Antaramuka | — | DDR4 SDRAM parallel interface |
| Operating Temperature Grade | — | Commercial (0C to 85C) |