K4B4G1646D-BPH90 vs W634GU6RB-12 Perbandingan
Perbandingan bersamaan detil K4B4G1646D-BPH90 dari Samsung Electronics dan W634GU6RB-12 dari Winbond. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BPH90 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4B4G1646D-BPH90 | W634GU6RB-12 |
|---|---|---|
| Merek | Samsung Electronics | Winbond |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4Gb | — |
| Organisasi | 32M x 16 | 256M x 16 |
| Number of Banks | 8 | — |
| Laju Data | 2133 Mb/s per pin | 1600 MT/s |
| Tegangan Pemuat | 1.35V (DDR3L) | 1.35V |
| Paket | 96FBGA | 96-VFBGA (7.5x13) |
| Suhu Kerja | 0°C to +85°C | -40°C to +95°C (12I), -40°C to +105°C (12J) |
| Latensi CAS | Programmable up to 14 | — |
| Burst Length | 8, 4 (with burst chop) | — |
| On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Lead-Free | Yes | — |
| Bebas Halogen | Yes | Yes |
| RoHS Compliant | Yes | — |
| Ukuran Memori | — | 4Gbit |
| Antarmuka | — | Parallel |
| Clock Frequency | — | 933 MHz |
| Access Time | — | 20 ns |
| Speed Grade | — | DDR3L-1600 (11-11-11) |
| RoHS | — | Compliant |
| Tipe Mounting | — | Surface Mount |
| Jumlah Pin | — | 96 |