K4RAH086VB-BCWM vs K4RBH086VB-BCQK Comparison
Detailed side-by-side comparison of K4RAH086VB-BCWM by Samsung Electronics and K4RBH086VB-BCQK by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ Active
Specification Comparison
| Parameter | K4RAH086VB-BCWM | K4RBH086VB-BCQK |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $44.55 | $0.00 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Memory Size | 16 Gb | — |
| Organization | 2G x 8 | 2G x 8 |
| Data Rate | 5600 Mbps | 4800 Mbps |
| Supply Voltage | 1.1 V | — |
| Interface | DDR5 (parallel) | DDR5 (CA bus, ODECC) |
| Package | FBGA-82 | FBGA-82 |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | DRAM (volatile) | — |
| Speed Grade | BCWM | — |
| Operating Temperature | Commercial temperature range (per datasheet) | [DATA_NEEDED: operating temperature range] |
| ECC | On-die ECC | — |
| Burst Length | 32 (BL32, DDR5 standard) | — |
| RoHS Status | Compliant | Compliant |
| Lifecycle Status | Active | — |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) | — |
| Density | — | 16 Gb |
| Supply Voltage (VDD) | — | 1.1 V |
| On-die ECC | — | Yes |
| Refresh | — | [DATA_NEEDED: refresh rate 32ms/64ms] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency at 4800 Mbps] |
| Power Supply Rails | — | VDD/VDDQ 1.1 V (PMIC on module) |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Packaging | — | [DATA_NEEDED: tray or tape and reel standard quantity] |