K4RAH086VB-BCWM vs K4RBH086VB-BCQK 对比
详细并排对比 K4RAH086VB-BCWM 出自 Samsung Electronics 和 K4RBH086VB-BCQK 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ 量产中
规格对比
| 参数 | K4RAH086VB-BCWM | K4RBH086VB-BCQK |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $44.55 | $0.00 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| 存储容量 | 16 Gb | — |
| 存储组织 | 2G x 8 | 2G x 8 |
| 数据速率 | 5600 Mbps | 4800 Mbps |
| 电源电压 | 1.1 V | — |
| 接口 | DDR5 (parallel) | DDR5 (CA bus, ODECC) |
| 封装 | FBGA-82 | FBGA-82 |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | DRAM (volatile) | — |
| Speed Grade | BCWM | — |
| 工作温度 | Commercial temperature range (per datasheet) | [DATA_NEEDED: operating temperature range] |
| ECC | On-die ECC | — |
| Burst Length | 32 (BL32, DDR5 standard) | — |
| RoHS 状态 | Compliant | Compliant |
| 生命周期状态 | Active | — |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) | — |
| Density | — | 16 Gb |
| Supply Voltage (VDD) | — | 1.1 V |
| On-die ECC | — | Yes |
| Refresh | — | [DATA_NEEDED: refresh rate 32ms/64ms] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency at 4800 Mbps] |
| Power Supply Rails | — | VDD/VDDQ 1.1 V (PMIC on module) |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |
| Packaging | — | [DATA_NEEDED: tray or tape and reel standard quantity] |