K4RAH086VB-BCWM vs K4RBH086VB-BCQK 比較
詳細並排比較 K4RAH086VB-BCWM 由 Samsung Electronics 與 K4RBH086VB-BCQK 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ 啟用中
規格比較
| 參數 | K4RAH086VB-BCWM | K4RBH086VB-BCQK |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $44.55 | — |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM |
| 記憶體容量 | 16 Gb | — |
| 組織 | 2G x 8 | 2G x 8 |
| 資料速率 | 5600 Mbps | 4800 Mbps |
| 供應電壓 | 1.1 V | — |
| 介面 | DDR5 (parallel) | DDR5 (CA bus, ODECC) |
| 封裝 | FBGA-82 | FBGA-82 |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | DRAM (volatile) | — |
| Speed Grade | BCWM | — |
| 工作溫度 | Commercial temperature range (per datasheet) | [DATA_NEEDED: operating temperature range] |
| ECC | On-die ECC | — |
| Burst Length | 32 (BL32, DDR5 standard) | — |
| RoHS 狀態 | Compliant | Compliant |
| 生命週期狀態 | Active | — |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) | — |
| Density | — | 16 Gb |
| Supply Voltage (VDD) | — | 1.1 V |
| On-die ECC | — | Yes |
| Refresh | — | [DATA_NEEDED: refresh rate 32ms/64ms] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency at 4800 Mbps] |
| Power Supply Rails | — | VDD/VDDQ 1.1 V (PMIC on module) |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |
| Packaging | — | [DATA_NEEDED: tray or tape and reel standard quantity] |