K4RAH086VB-BCWM vs K4RBH086VB-BCQK Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4RAH086VB-BCWM sa pamamagitan ng Samsung Electronics at K4RBH086VB-BCQK sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K4RAH086VB-BCWM | K4RBH086VB-BCQK |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $44.55 | — |
| Uri ng Memory | DDR5 SDRAM | DDR5 SDRAM |
| Laki ng Memory | 16 Gb | — |
| Organisasyon | 2G x 8 | 2G x 8 |
| Rate ng Data | 5600 Mbps | 4800 Mbps |
| Volte ng Pagbibigay | 1.1 V | — |
| Interface | DDR5 (parallel) | DDR5 (CA bus, ODECC) |
| Packhaging | FBGA-82 | FBGA-82 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | DRAM (volatile) | — |
| Speed Grade | BCWM | — |
| Temperature na Operasyon | Commercial temperature range (per datasheet) | [DATA_NEEDED: operating temperature range] |
| ECC | On-die ECC | — |
| Burst Length | 32 (BL32, DDR5 standard) | — |
| Tindminan RoHS | Compliant | Compliant |
| Katayuan ng Lifecycle | Active | — |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) | — |
| Density | — | 16 Gb |
| Supply Voltage (VDD) | — | 1.1 V |
| On-die ECC | — | Yes |
| Refresh | — | [DATA_NEEDED: refresh rate 32ms/64ms] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency at 4800 Mbps] |
| Power Supply Rails | — | VDD/VDDQ 1.1 V (PMIC on module) |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Packaging | — | [DATA_NEEDED: tray or tape and reel standard quantity] |