K4RAH086VB-BCWM vs K4RBH086VB-BCQK Perbandingan
Perbandingan bersamaan detil K4RAH086VB-BCWM dari Samsung Electronics dan K4RBH086VB-BCQK dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4RAH086VB-BCWM | K4RBH086VB-BCQK |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $44,55 | — |
| Tipe Memori | DDR5 SDRAM | DDR5 SDRAM |
| Ukuran Memori | 16 Gb | — |
| Organisasi | 2G x 8 | 2G x 8 |
| Laju Data | 5600 Mbps | 4800 Mbps |
| Tegangan Pemuat | 1.1 V | — |
| Antarmuka | DDR5 (parallel) | DDR5 (CA bus, ODECC) |
| Paket | FBGA-82 | FBGA-82 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | DRAM (volatile) | — |
| Speed Grade | BCWM | — |
| Suhu Kerja | Commercial temperature range (per datasheet) | [DATA_NEEDED: operating temperature range] |
| ECC | On-die ECC | — |
| Burst Length | 32 (BL32, DDR5 standard) | — |
| Status RoHS | Compliant | Compliant |
| Status Lingkungan Hidup | Active | — |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) | — |
| Density | — | 16 Gb |
| Supply Voltage (VDD) | — | 1.1 V |
| On-die ECC | — | Yes |
| Refresh | — | [DATA_NEEDED: refresh rate 32ms/64ms] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency at 4800 Mbps] |
| Power Supply Rails | — | VDD/VDDQ 1.1 V (PMIC on module) |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Packaging | — | [DATA_NEEDED: tray or tape and reel standard quantity] |