NT5CC256M16CN-FLI vs K4B4G1646E-BYMA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16CN-FLI sa pamamagitan ng Nanya Technology at K4B4G1646E-BYMA sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Nanya Technology
NT5CC256M16CN-FLI - 4Gb DDR3L SDRAM | Nanya Technology
NT5CC256M16CN-FLI ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | NT5CC256M16CN-FLI | K4B4G1646E-BYMA |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $14.32 |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb (256M x 16) | 4 Gb |
| Volte ng Pagbibigay | 1.35V (DDR3L) | 1.35 V (1.28 V to 1.575 V) |
| Rate ng Data | 1866 Mbps (PC3-14900) | 1866 Mbps/pin |
| I/O Width | 16 bits | — |
| Internal Banks | 8 | — |
| Burst Length | 8 and 4 (with burst chop) | [DATA_NEEDED: Burst Length] |
| Latensya ng CAS | Programmable (11, 12, 13) | [DATA_NEEDED: CAS Latency] |
| Packhaging | TFBGA-96 | FBGA-96 |
| Hanay ng Temperature na Operasyon | 0°C to +95°C (case) | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Auto Self-Refresh | Supported | — |
| Auto Precharge | Supported | — |
| On-Die Termination (ODT) | Supported | — |
| Write Leveling | Supported | — |
| ZQ Calibration | Supported | — |
| Organisasyon | — | 256M x 16 |
| Clock Frequency | — | 933 MHz |
| Temperature na Operasyon | — | 0°C to +95°C |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| Uri ng Pagpapasok | — | Surface Mount |
| RoHS | — | Compliant |
| Bilang ng Pins | — | 96 |