W634GU6RB-11TR vs K4B4G1646D-BYH9 Comparison
Detailed side-by-side comparison of W634GU6RB-11TR by Winbond and K4B4G1646D-BYH9 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ ActiveSpecification Comparison
| Parameter | W634GU6RB-11TR | K4B4G1646D-BYH9 |
|---|---|---|
| Brand | Winbond | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | — |
| Memory Size | 4Gbit (256M x 16) | — |
| Clock Frequency | 933 MHz | — |
| Data Rate | 1866 MT/s | 1333 Mbps |
| Access Time | 20 ns | — |
| Supply Voltage | 1.35V (1.5V compatible) | 1.35 V |
| Interface | Parallel | — |
| Package | 96-VFBGA (7.5x13 mm) | 96FBGA |
| Operating Temperature | -40°C to +95°C | 0 ~ 85 °C |
| CAS Latency | 13 | Programmable |
| Organization | 256M x 16 | 256M x 16 |
| Mounting Type | Surface Mount | — |
| RoHS Status | Compliant | — |
| Halogen Free | Yes | — |
| Auto Self-Refresh | Yes | — |
| Write Leveling | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Density | — | 4 Gb |
| Number of Banks | — | 8 |
| Write Latency | — | Programmable |
| On-Die Termination | — | Yes |
| Internal Calibration | — | Yes |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| RoHS Compliant | — | Yes |
| Die Version | — | D-die |