W634GU6RB-11TR vs K4B4G1646D-BYH9 Perbandingan
Perbandingan bersamaan detil W634GU6RB-11TR dari Winbond dan K4B4G1646D-BYH9 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | W634GU6RB-11TR | K4B4G1646D-BYH9 |
|---|---|---|
| Merek | Winbond | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR3L SDRAM | — |
| Ukuran Memori | 4Gbit (256M x 16) | — |
| Clock Frequency | 933 MHz | — |
| Laju Data | 1866 MT/s | 1333 Mbps |
| Access Time | 20 ns | — |
| Tegangan Pemuat | 1.35V (1.5V compatible) | 1.35 V |
| Antarmuka | Parallel | — |
| Paket | 96-VFBGA (7.5x13 mm) | 96FBGA |
| Suhu Kerja | -40°C to +95°C | 0 ~ 85 °C |
| Latensi CAS | 13 | Programmable |
| Organisasi | 256M x 16 | 256M x 16 |
| Tipe Mounting | Surface Mount | — |
| Status RoHS | Compliant | — |
| Bebas Halogen | Yes | — |
| Auto Self-Refresh | Yes | — |
| Write Leveling | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Density | — | 4 Gb |
| Number of Banks | — | 8 |
| Write Latency | — | Programmable |
| On-Die Termination | — | Yes |
| Internal Calibration | — | Yes |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |
| RoHS Compliant | — | Yes |
| Die Version | — | D-die |