W634GU6RB09J vs NT5CC256M16DP-DI Comparison
Detailed side-by-side comparison of W634GU6RB09J by Winbond and NT5CC256M16DP-DI by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5CC256M16DP-DI
NT5CC256M16DP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CC256M16DP-DI β ActiveSpecification Comparison
| Parameter | W634GU6RB09J | NT5CC256M16DP-DI |
|---|---|---|
| Brand | Winbond | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.10 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4Gbit (256M x 16) | β |
| Data Rate | 1066 MHz (DDR3L-2133) | 1600 Mbps/pin (800MHz) |
| Supply Voltage | 1.35V | 1.35V |
| CAS Latency | 20 ns | 11, 12, 13 (programmable) |
| Package | 96-VFBGA (7.5x13mm) | VFBGA-96 |
| Operating Temperature | 0Β°C to +95Β°C (Tc) | β |
| Interface | Parallel | Differential clock (CK, CK#) |
| Mounting Type | Surface Mount | β |
| RoHS Status | Compliant | β |
| Halogen-Free | Yes | β |
| Organization | 256M x 16 | 256M x 16 |
| Burst Length | 8 and 4 | 8, 4 (with burst chop) |
| Number of Pins | 96 | β |
| Ball Pitch | 0.8 mm | β |
| Density | β | 4Gb |
| Operating Temperature Range | β | -40Β°C to +95Β°C (industrial) |
| Number of Banks | β | 8 |
| Refresh | β | Auto-refresh and self-refresh |
| On-Die Termination | β | Yes (ODT) |
| RoHS | β | Compliant |
| Lead-Free | β | Yes |