YZ48G16V-F9HPI-M vs K4A8G165WB-BIWE Comparison
Detailed side-by-side comparison of YZ48G16V-F9HPI-M by Loongtion and K4A8G165WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Loongtion
YZ48G16V-F9HPI-M
YZ48G16V-F9HPI-M - 8Gb DDR4 SDRAM x16 FBGA96 | Loongtion
YZ48G16V-F9HPI-M β ActiveSamsung Electronics
K4A8G165WB-BIWE
K4A8G165WB-BIWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung
K4A8G165WB-BIWE β ActiveSpecification Comparison
| Parameter | YZ48G16V-F9HPI-M | K4A8G165WB-BIWE |
|---|---|---|
| Brand | Loongtion | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.60 | $14.22 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 Mbps |
| Package | FBGA96 | 96-ball FBGA |
| Operating Temperature Range | -40Β°C to +85Β°C | β |
| Supply Voltage | 1.2 V | 1.2 V |
| Interface | DDR4 | Parallel |
| Pin Count | 96 | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | β |
| Industrial Grade | Yes | β |
| Compatible with | Samsung K4A8G165WC-BCWE, Micron MT40A512M16JY-07EAIT:B | β |
| Data Bus Width | 16 bits | β |
| Refresh | Auto-refresh | Auto-refresh, Self-refresh |
| Operating Temperature | β | -40Β°C to +95Β°C |
| Burst Length | β | 8, 16 |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| On-Die Termination | β | Yes |
| RoHS | β | Compliant |
| Number of Pins | β | 96 |