YZ48G16V-F9HPI-M vs K4A8G165WB-BIWE Comparison
Detailed side-by-side comparison of YZ48G16V-F9HPI-M by Loongtion and K4A8G165WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | YZ48G16V-F9HPI-M | K4A8G165WB-BIWE |
|---|---|---|
| Brand | Loongtion | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 Mbps |
| Package | FBGA96 | 96-ball FBGA |
| Operating Temperature Range | -40°C to +85°C | — |
| Supply Voltage | 1.2 V | 1.2 V |
| Interface | DDR4 | Parallel |
| Pin Count | 96 | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | — |
| Industrial Grade | Yes | — |
| Compatible with | Samsung K4A8G165WC-BCWE, Micron MT40A512M16JY-07EAIT:B | — |
| Data Bus Width | 16 bits | — |
| Refresh | Auto-refresh | Auto-refresh, Self-refresh |
| Operating Temperature | — | -40°C to +95°C |
| Burst Length | — | 8, 16 |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| On-Die Termination | — | Yes |
| RoHS | — | Compliant |
| Number of Pins | — | 96 |