NT5CB256M16CP-DIH - 4Gb DDR3L SDRAM 256Mx16 | Nanya
Référence : NT5CB256M16CP-DIH ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3 400,00 |
| 1 000 | $6.5 | $6 500,00 |
NT5CB256M16CP-DIH Présentation
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems.
Key features include differential clock inputs (CK, CK#), programmable CAS Latency (CL) and WRITE Latency (CWL) of 5,6,7,8, and 9, and POSTED CAS additive latency. The device supports on-die termination (ODT) and dynamic ODT for improved signal integrity. It also features auto-refresh and self-refresh modes for low-power standby.
The NT5CB256M16CP-DIH uses a 70nm process technology, enabling high density and low power. The 96-ball TFBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm. The device is RoHS compliant and supports industrial temperature range (-40°C to +95°C) for the -DIH variant.
Typical applications include embedded computing, networking equipment, industrial automation, and automotive infotainment systems. Its low voltage and high speed make it ideal for power-sensitive designs.
When designing with this memory, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.35V supply and SSTL_15 interface.
Alternatives de remplacement direct pour NT5CB256M16CP-DIH — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5CB256M16CP-DIH (même facteur de forme et même empreinte) — différant par Package, Supply Voltage, Data Rate, CAS Latency (CL), Operating Temperature.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5CB256M16CP-DI
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →NT5CB256M16CP-DIA
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
NT5CB256M16DP-DI
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →IS43TR16512B-125KBLI
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
NT5CB256M16CP-DIH Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4Gb |
| Organisation de la mémoire | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (±0.075V) |
| Débit de données | 1600Mbps (DDR3L-1600) |
| Internal Banks | 8 (BA0-BA2) |
| CAS Latency (CL) | 5, 6, 7, 8, 9 |
| WRITE Latency (CWL) | 5, 6, 7, 8, 9 |
| Interface | SSTL_15 |
| Boîtier | 96-ball TFBGA |
| Température de fonctionnement | -40°C to +95°C (industrial) |
| RoHS | Compliant |
| REACH | Compliant |
| Lead-Free | Yes |
| Process Technology | 70nm |
Configuration des broches de NT5CB256M16CP-DIH
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | CK — Clock input (positive) |
| Broche C2 | CK# — Clock input (negative) |
| Broche C3 | CKE — Clock enable |
| Broche D1 | CS# — Chip select |
| Broche D2 | RAS# — Row address strobe |
| Broche D3 | CAS# — Column address strobe |
Applications typiques
NT5CB256M16CP-DIH convient pour 6 applications: Embedded Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Test and Measurement, IoT Gateways.
Embedded Computing
The NT5CB256M16CP-DIH provides high-density, low-power memory for embedded processors and SoCs. Its 4Gb density and 16-bit bus interface align with typical embedded memory requirements, while the 1.35V operation reduces power consumption in battery-powered devices. The industrial temperature range (-40°C to +95°C) ensures reliable operation in harsh environments. When used with an embedded CPU, the DDR3L interface supports data rates up to 1600Mbps, enabling fast data processing. Designers should ensure proper termination and layout to maintain signal integrity at these speeds.
Recommandé
Networking Equipment
In networking switches and routers, the NT5CB256M16CP-DIH serves as packet buffer memory, providing high bandwidth and low latency. The 1600Mbps data rate supports high-throughput packet processing, while the 8 internal banks enable efficient interleaving. The low 1.35V supply reduces heat generation in dense line cards. The device's on-die termination (ODT) improves signal integrity on long PCB traces. For optimal performance, place the memory close to the network processor and use controlled impedance traces.
Recommandé
Industrial Automation
The NT5CB256M16CP-DIH is suitable for industrial controllers and PLCs that require reliable memory in extreme conditions. Its industrial temperature rating (-40°C to +95°C) and RoHS compliance make it ideal for factory floor environments. The 4Gb density provides ample storage for control algorithms and data logging. The DDR3L interface supports fast read/write cycles, essential for real-time control. When designing for industrial use, consider conformal coating and vibration-resistant soldering.
Recommandé
Automotive Infotainment
The NT5CB256M16CP-DIH supports automotive infotainment systems requiring high-speed memory for navigation, multimedia, and connectivity. The -DIA variant is AEC-Q100 qualified for automotive use, but the -DIH variant can be used in non-safety-critical infotainment. The 1.35V operation reduces power consumption in vehicles. The 1600Mbps data rate enables smooth video playback and responsive UI. For automotive designs, ensure the memory meets AEC-Q100 requirements and consider thermal management in the dashboard environment.
Recommandé
Test and Measurement
In oscilloscopes and data acquisition systems, the NT5CB256M16CP-DIH provides high-speed data buffering. The 1600Mbps data rate allows capturing fast signals, while the 4Gb density stores long waveforms. The low voltage reduces noise in sensitive analog circuits. The device's differential clock inputs (CK, CK#) improve noise immunity. For high-speed data capture, use the memory in burst mode and ensure proper clock alignment.
Recommandé
IoT Gateways
The NT5CB256M16CP-DIH is used in IoT gateways to buffer sensor data and run edge analytics. Its low power consumption (1.35V) is critical for always-on devices. The 4Gb density supports local data storage and over-the-air updates. The industrial temperature range allows deployment in outdoor enclosures. For IoT designs, optimize for low-power modes such as self-refresh to extend battery life.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5CB256M16CP-DIH — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5CB256M16CP-DI | NT5CB256M16CP-DIA | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA |
| Brand | Nanya Technology Corporation | Nanya Technology Corporation | Nanya Technology Corporation | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1600Mbps | 1600Mbps | 1600Mbps | 1600Mbps |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Industrial temperature range (-40°C to +95°C) (vs NT5CB256M16CP-DI)
- Low voltage operation (1.35V) (vs Standard DDR3 (1.5V))
- High data rate (1600Mbps) (vs DDR3L-1333 parts)
Notes de conception
For DDR3L-1600, maintain controlled impedance of 50 ohms for single-ended and 100 ohms differential for clock signals. Keep trace lengths matched within 100 mils for data and address lines. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Nanya datasheet to minimize crosstalk and signal reflections.
The NT5CB256M16CP-DIH requires a clean 1.35V supply. Use a low-noise LDO or a switching regulator with proper filtering. Ensure the VDD and VDDQ rails are isolated with ferrite beads to prevent digital noise from affecting the memory. The device supports self-refresh mode, which reduces power consumption to a few mA; use this mode in battery-powered applications.
The industrial temperature range (-40°C to +95°C) allows operation in harsh environments, but ensure adequate airflow or heatsinking if the device is placed near other heat sources. The 96-ball TFBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For high-density designs, use thermal vias under the package to improve heat dissipation.
Informations de conformité
RoHS and REACH compliant per Abacus Technologies listing. Not AEC-Q100 qualified for -DIH variant; use -DIA for automotive.
