NT5AD512M16A4-GZ - 8Gb DDR4 SDRAM 512Mx16 | Nanya
MPN: NT5AD512M16A4-GZ ✓ פעילNT5AD512M16A4-GZ סקירה
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and embedded systems, offering higher bandwidth and lower power consumption than its predecessors. DDR4 operates at lower voltages (1.2V) and supports higher densities, enabling larger memory capacities in compact form factors.
Key features of the NT5AD512M16A4-GZ include a maximum clock frequency of 1200 MHz (DDR4-2400), a 16-bit data bus, and support for interleaved burst lengths of 4 and 8. It incorporates advanced functions such as auto self-refresh, a built-in temperature sensor, auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check), data mask, write leveling, and ZQ calibration. These features enhance signal integrity, reliability, and ease of use in high-speed systems.
The device is designed for commercial and industrial temperature ranges, ensuring reliable operation in demanding environments. It is RoHS compliant and lead-free, meeting environmental standards. The 96-ball TFBGA package provides a compact footprint with excellent thermal and electrical performance, suitable for space-constrained PCB designs.
Typical applications include enterprise servers, data centers, networking equipment, industrial automation, and advanced driver assistance systems (ADAS). The high density and bandwidth make it ideal for memory-intensive tasks such as real-time data processing, AI inference, and high-performance computing.
When designing with this DDR4 SDRAM, ensure proper termination and signal integrity practices are followed, including matched trace lengths and appropriate on-die termination (ODT) settings. The ZQ calibration pin must be connected to a 240-ohm resistor to ground for proper impedance calibration. Additionally, the VTT and VREF supplies should be decoupled with capacitors to minimize noise.
חלופות תחליף ישיר עבור NT5AD512M16A4-GZ — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם NT5AD512M16A4-GZ (אותו גורם צורה וטביעת רגל) — שונים ב Package, Data Rate, Operating Temperature Range, Supply Voltage, Density.
NT5AD512M16C4-JRI
✅ Drop-In✓ במלאי
$75.58 / יחידה
הצג גיליון נתונים ←NT5AD512M16A4-HR
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←NT5AD512M16
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←MT40A512M16JY-075E
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4A8G165WB-BCWE
✅ Drop-In ⚠️ מפרטים לא מאומתים✓ במלאי
$6.55 / יחידה
הצג גיליון נתונים ←H5AN8G6NDJR
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←NT5AD512M16A4-GZ דירוגים מרביים ומאפיינים חשמליים
| סוג זיכרון | DDR4 SDRAM |
| ארגון | 512M x 16 |
| Density | 8Gb |
| מתח אספקה | 1.2V |
| תדר שעון מקסימלי | 1200 MHz |
| רוחב אפיק נתונים | 16 bits |
| מארז | TFBGA-96 |
| Number of Terminals | 96 |
| Interleaved Burst Length | 4, 8 |
| Access Mode | Four Bank Page Burst |
| טווח טמפרטורת פעולה | Commercial and Industrial |
| RoHS | Compliant |
| Lead-Free | Yes |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| CRC Function | Yes |
| Data Mask Function | Yes |
| Write Leveling Function | Yes |
| ZQ Calibration Function | Yes |
תצורת פינים של NT5AD512M16A4-GZ
| פין A1 | VDD — Power supply |
| פין A2 | DQ0 — Data input/output 0 |
| פין A3 | DQ1 — Data input/output 1 |
| פין B1 | VSS — Ground |
| פין B2 | DQ2 — Data input/output 2 |
| פין B3 | DQ3 — Data input/output 3 |
| פין C1 | VDDQ — Power supply for output buffers |
| פין C2 | DQ4 — Data input/output 4 |
| פין C3 | DQ5 — Data input/output 5 |
| פין D1 | VSSQ — Ground for output buffers |
| פין D2 | DQ6 — Data input/output 6 |
| פין D3 | DQ7 — Data input/output 7 |
| פין E1 | VDD — Power supply |
| פין E2 | DQS0 — Data strobe 0 |
| פין E3 | DQS0# — Data strobe 0 complement |
| פין F1 | VSS — Ground |
| פין F2 | DM0 — Data mask 0 |
| פין F3 | VDDQ — Power supply for output buffers |
| פין G1 | VSSQ — Ground for output buffers |
| פין G2 | CK — Clock input |
| פין G3 | CK# — Clock input complement |
| פין H1 | VDD — Power supply |
| פין H2 | CKE — Clock enable |
| פין H3 | CS# — Chip select |
| פין J1 | VSS — Ground |
| פין J2 | RAS# — Row address strobe |
| פין J3 | CAS# — Column address strobe |
| פין K1 | VDDQ — Power supply for output buffers |
| פין K2 | WE# — Write enable |
| פין K3 | A0 — Address input 0 |
| פין L1 | VSSQ — Ground for output buffers |
| פין L2 | A1 — Address input 1 |
| פין L3 | A2 — Address input 2 |
| פין M1 | VDD — Power supply |
| פין M2 | A3 — Address input 3 |
| פין M3 | A4 — Address input 4 |
| פין N1 | VSS — Ground |
| פין N2 | A5 — Address input 5 |
| פין N3 | A6 — Address input 6 |
| פין P1 | VDDQ — Power supply for output buffers |
| פין P2 | A7 — Address input 7 |
| פין P3 | A8 — Address input 8 |
| פין R1 | VSSQ — Ground for output buffers |
| פין R2 | A9 — Address input 9 |
| פין R3 | A10/AP — Address input 10 / Auto precharge |
| פין T1 | VDD — Power supply |
| פין T2 | A11 — Address input 11 |
| פין T3 | A12/BC# — Address input 12 / Burst chop |
| פין U1 | VSS — Ground |
| פין U2 | A13 — Address input 13 |
| פין U3 | A14 — Address input 14 |
| פין V1 | VDDQ — Power supply for output buffers |
| פין V2 | A15 — Address input 15 |
| פין V3 | BA0 — Bank address 0 |
| פין W1 | VSSQ — Ground for output buffers |
| פין W2 | BA1 — Bank address 1 |
| פין W3 | BA2 — Bank address 2 |
| פין Y1 | VDD — Power supply |
| פין Y2 | BG0 — Bank group 0 |
| פין Y3 | BG1 — Bank group 1 |
| פין AA1 | VSS — Ground |
| פין AA2 | ACT# — Activate command |
| פין AA3 | PAR — Parity input |
| פין AB1 | VDDQ — Power supply for output buffers |
| פין AB2 | ALERT# — Alert output |
| פין AB3 | RESET# — Reset input |
| פין AC1 | VSSQ — Ground for output buffers |
| פין AC2 | TEN — Temperature sensor enable |
| פין AC3 | ZQ — Calibration reference |
| פין AD1 | VDD — Power supply |
| פין AD2 | VREFCA — Reference voltage for command/address |
| פין AD3 | VTT — Termination voltage |
יישומים טיפוסיים
NT5AD512M16A4-GZ מתאים עבור 6 יישוםs: Enterprise Servers, Data Center & Enterprise Computing, Networking Equipment, Industrial Automation, Automotive ADAS, Consumer Electronics.
Enterprise Servers
The NT5AD512M16A4-GZ provides high-density, high-bandwidth memory for enterprise servers, supporting virtualization, database management, and cloud computing. Its 8Gb density and DDR4-2400 speed enable fast data access and large memory pools, improving overall system performance. The 1.2V operation reduces power consumption, lowering total cost of ownership in data centers.
מומלץ
Data Center & Enterprise Computing
In data centers, the NT5AD512M16A4-GZ supports high-performance computing, AI inference, and big data analytics. Its high bandwidth and low latency are critical for processing large datasets. The device's industrial temperature range ensures reliable operation in demanding environments. The built-in temperature sensor and auto self-refresh enhance data integrity and power efficiency.
מומלץ
Networking Equipment
The NT5AD512M16A4-GZ is ideal for networking equipment such as routers, switches, and firewalls, where high-speed packet processing and large routing tables require substantial memory. Its 8Gb density and DDR4-2400 speed provide the necessary bandwidth for line-rate forwarding. The compact TFBGA package saves PCB space, and the low 1.2V supply reduces heat generation in dense chassis.
מומלץ
Industrial Automation
In industrial automation, the NT5AD512M16A4-GZ provides reliable memory for PLCs, robotics, and machine vision systems. Its industrial temperature range ensures operation in harsh environments. The device's CRC and data mask functions improve data integrity in noisy industrial settings. The 1.2V operation reduces power consumption, which is beneficial for energy-efficient factory floors.
מומלץ
Automotive ADAS
The NT5AD512M16A4-GZ is used in automotive advanced driver assistance systems (ADAS) for real-time sensor fusion and decision making. Its high bandwidth supports processing of camera, radar, and LiDAR data. The device's industrial temperature range is suitable for automotive environments. The built-in temperature sensor and auto self-refresh enhance reliability in varying thermal conditions.
מומלץ
Consumer Electronics
The NT5AD512M16A4-GZ can be used in high-end consumer electronics such as gaming consoles, set-top boxes, and smart TVs, where high memory bandwidth is needed for graphics and multimedia. Its 8Gb density allows for smooth multitasking and fast app loading. The low 1.2V supply helps extend battery life in portable devices, and the compact TFBGA package fits slim designs.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור NT5AD512M16A4-GZ — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | NT5AD512M16C4-JRI | MT40A512M16JY-075E | K4A8G165WB-BCWE |
|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 8Gb | 8Gb | 8Gb | 8Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
מבדילים עיקריים
- Industrial temperature range support (לעומתMT40A512M16JY-075E)
- Same-brand availability (לעומתK4A8G165WB-BCWE)
- Built-in temperature sensor (לעומתH5AN8G6NDJR)
הערות תכנון
For DDR4 routing, maintain matched trace lengths for DQ, DQS, and address/command signals to ensure signal integrity. Use controlled impedance traces (typically 40-50 ohms single-ended, 80-100 ohms differential) and provide proper termination for VTT. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin to minimize power supply noise.
The NT5AD512M16A4-GZ operates over commercial and industrial temperature ranges. Ensure adequate airflow or heatsinking in high-ambient-temperature environments. The TFBGA package has a low thermal resistance, but power dissipation should be considered. Monitor the built-in temperature sensor to implement thermal throttling if necessary.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for proper impedance calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Also, ensure VREFCA and VTT are properly decoupled to avoid reference voltage noise, which can cause data errors.
מידע על תאימות
RoHS compliant and lead-free as per distributor listings. AEC-Q100 not applicable as this is a memory IC, not an automotive-qualified part.
