1ED3124MC12HXUMA1 vs 2ED2106S06FXUMA1 Perbandingan

Perbandingan bersamaan detil 1ED3124MC12HXUMA1 dari Infineon dan 2ED2106S06FXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1ED3124MC12HXUMA1 2ED2106S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Channel Type Single-channel —
Configuration High-side / Low-side (non-inverting) High-Side and Low-Side (Half-Bridge)
Number of Drivers 1 2
Jumlah Output 1 2 (1 high-side, 1 low-side)
Peak Source Current 13.5 A —
Peak Sink Current 14 A —
Isolation Technology Magnetic coupling (coreless transformer) —
Isolation Voltage (RMS) 5.7 kV —
Transient Overvoltage 8000 Vpk —
Supply Voltage (VCC2) 10.5 V to 35 V —
Supply Current (Max) 1.1 mA —
Propagation Delay (Typ) 90 ns —
Waktu naik 15 ns —
Waktu Menurun 30 ns —
Suhu Kerja -40 C to +125 C —
Paket PG-DSO-8 (DSO-8) PG-DSO-8-69 (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Protections UVLO, Short-Circuit (DESAT) —
Target Devices IGBT, SiC MOSFET —
Status RoHS Compliant —
Offset Voltage (Voffset max) — 650 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Input Logic Compatibility — CMOS, TTL
Propagation Delay (typ.) — 100 ns
Jumlah Pin — 8
Bootstrap Diode — Integrated
Rentang Suhu Kerja — -40C to +125C
Packaging — Tape & Reel
Tipe Output — Half-Bridge, Non-Inverting

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