1ED3124MC12HXUMA1 vs 2ED2106S06FXUMA1 比較

詳細並排比較 1ED3124MC12HXUMA1 由 Infineon 與 2ED2106S06FXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 啟用中
Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ 啟用中

規格比較

參數 1ED3124MC12HXUMA1 2ED2106S06FXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Channel Type Single-channel —
Configuration High-side / Low-side (non-inverting) High-Side and Low-Side (Half-Bridge)
Number of Drivers 1 2
輸出數量 1 2 (1 high-side, 1 low-side)
Peak Source Current 13.5 A —
Peak Sink Current 14 A —
Isolation Technology Magnetic coupling (coreless transformer) —
Isolation Voltage (RMS) 5.7 kV —
Transient Overvoltage 8000 Vpk —
Supply Voltage (VCC2) 10.5 V to 35 V —
Supply Current (Max) 1.1 mA —
Propagation Delay (Typ) 90 ns —
上升時間 15 ns —
下降時間 30 ns —
工作溫度 -40 C to +125 C —
封裝 PG-DSO-8 (DSO-8) PG-DSO-8-69 (DSO-8)
安裝類型 Surface Mount Surface Mount
Protections UVLO, Short-Circuit (DESAT) —
Target Devices IGBT, SiC MOSFET —
RoHS 狀態 Compliant —
Offset Voltage (Voffset max) — 650 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Input Logic Compatibility — CMOS, TTL
Propagation Delay (typ.) — 100 ns
腳位數 — 8
Bootstrap Diode — Integrated
工作溫度範圍 — -40C to +125C
Packaging — Tape & Reel
輸出類型 — Half-Bridge, Non-Inverting

資料表與資源

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