2ED2304S06F vs 2ED2304S06FXUMA1 Perbandingan

Perbandingan bersamaan detil 2ED2304S06F dari Infineon dan 2ED2304S06FXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED2304S06F 2ED2304S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC —
Topologi High-side + Low-side, half-bridge —
Technology Infineon thin-film SOI (Silicon-On-Insulator) Infineon thin-film SOI
Maximum Blocking Voltage (High-Side) 650 V —
Source Current (typ.) 0.36 A 0.36 A
Sink Current (typ.) 0.7 A 0.7 A
Integrated Bootstrap Diode Yes —
Logic Input Compatibility 3.3 V CMOS / LSTTL (Schmitt trigger with hysteresis, pull-down) —
Input Pins LIN (low-side in), HIN (high-side in) —
Shoot-Through Protection Built-in interlock logic —
Paket PG-DSO-8-910 (DSO-8) PG-DSO-8-910 (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Status RoHS Compliant Compliant
Target Power Devices IGBTs and power MOSFETs —
Suhu Kerja [DATA_NEEDED: operating temperature range] —
Driver Configuration — Half-Bridge (High-Side + Low-Side)
Blocking Voltage (High-Side) — 650 V
Input Logic Compatibility — 3.3 V CMOS / LSTTL (Schmitt-trigger)
VCC Supply Range — 10 V to 17 V
Bootstrap Diode — Integrated (BSD)
Undervoltage Lockout (UVLO) — Yes (VCC and VB-VS)
Interlock / Anti-Shoot-Through — Built-in
Propagation Delay (typ.) — 200 ns
Rentang Suhu Kerja — -40C to +125C
Level MSL — 2

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