2ED2304S06F vs 2ED2304S06FXUMA1 比較
詳細並排比較 2ED2304S06F 由 Infineon 與 2ED2304S06FXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 2ED2304S06F | 2ED2304S06FXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Product Type | Half-Bridge Gate Driver IC | — |
| 拓撲 | High-side + Low-side, half-bridge | — |
| Technology | Infineon thin-film SOI (Silicon-On-Insulator) | Infineon thin-film SOI |
| Maximum Blocking Voltage (High-Side) | 650 V | — |
| Source Current (typ.) | 0.36 A | 0.36 A |
| Sink Current (typ.) | 0.7 A | 0.7 A |
| Integrated Bootstrap Diode | Yes | — |
| Logic Input Compatibility | 3.3 V CMOS / LSTTL (Schmitt trigger with hysteresis, pull-down) | — |
| Input Pins | LIN (low-side in), HIN (high-side in) | — |
| Shoot-Through Protection | Built-in interlock logic | — |
| 封裝 | PG-DSO-8-910 (DSO-8) | PG-DSO-8-910 (DSO-8) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 | — |
| RoHS 狀態 | Compliant | Compliant |
| Target Power Devices | IGBTs and power MOSFETs | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | — |
| Driver Configuration | — | Half-Bridge (High-Side + Low-Side) |
| Blocking Voltage (High-Side) | — | 650 V |
| Input Logic Compatibility | — | 3.3 V CMOS / LSTTL (Schmitt-trigger) |
| VCC Supply Range | — | 10 V to 17 V |
| Bootstrap Diode | — | Integrated (BSD) |
| Undervoltage Lockout (UVLO) | — | Yes (VCC and VB-VS) |
| Interlock / Anti-Shoot-Through | — | Built-in |
| Propagation Delay (typ.) | — | 200 ns |
| 工作溫度範圍 | — | -40C to +125C |
| MSL 等級 | — | 2 |