2ED2304S06F vs 2ED2304S06FXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2ED2304S06F disebabkan oleh Infineon dan 2ED2304S06FXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2ED2304S06F 2ED2304S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC —
Tetstruktur High-side + Low-side, half-bridge —
Technology Infineon thin-film SOI (Silicon-On-Insulator) Infineon thin-film SOI
Maximum Blocking Voltage (High-Side) 650 V —
Source Current (typ.) 0.36 A 0.36 A
Sink Current (typ.) 0.7 A 0.7 A
Integrated Bootstrap Diode Yes —
Logic Input Compatibility 3.3 V CMOS / LSTTL (Schmitt trigger with hysteresis, pull-down) —
Input Pins LIN (low-side in), HIN (high-side in) —
Shoot-Through Protection Built-in interlock logic —
Kemasan PG-DSO-8-910 (DSO-8) PG-DSO-8-910 (DSO-8)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Status RoHS Compliant Compliant
Target Power Devices IGBTs and power MOSFETs —
Suhu Operasi [DATA_NEEDED: operating temperature range] —
Driver Configuration — Half-Bridge (High-Side + Low-Side)
Blocking Voltage (High-Side) — 650 V
Input Logic Compatibility — 3.3 V CMOS / LSTTL (Schmitt-trigger)
VCC Supply Range — 10 V to 17 V
Bootstrap Diode — Integrated (BSD)
Undervoltage Lockout (UVLO) — Yes (VCC and VB-VS)
Interlock / Anti-Shoot-Through — Built-in
Propagation Delay (typ.) — 200 ns
Gambaran Suhu Operasi — -40C to +125C
Aras MSL — 2

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