2N7002LT1G vs MMBF170LT1 Perbandingan

Perbandingan bersamaan detil 2N7002LT1G dari onsemi dan MMBF170LT1 dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2N7002LT1G MMBF170LT1
Merek onsemi onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel N-Channel
Channel Mode Enhancement Mode —
Drain-Source Voltage VDSS 60 V —
Continuous Drain Current ID 115 mA (Tc) —
Power Dissipation PD 225 mW (Ta) —
Maximum RDS(on) 7.5 ohm @ VGS = 5 V —
Configuration Single FET —
Paket SOT-23-3 (TO-236) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
Kategori Small Signal MOSFET —
Technology MOSFET DMOS
Manufacturer onsemi (ON Semiconductor) onsemi (ON Semiconductor)
Lead Finish [DATA_NEEDED: lead finish/plating] —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] -55 °C to +150 °C (TJ max per datasheet)
Packaging [DATA_NEEDED: packaging type] —
Part Number — MMBF170LT1
Tipe Transistor — N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDSS) — 60 V
Drain-Gate Voltage (VDGS) — 60 Vdc
Gate-Source Voltage - Continuous (VGS) — ±20 Vdc (per datasheet)
Gate-Source Voltage - Non-repetitive (VGSM) — ±40 Vpk (tp <= 50 ms)
Continuous Drain Current (ID) — 500 mA (Ta)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Total Device Dissipation (PD) — 225 mW (Ta, FR-5 board)
Paket / Case — SOT-23-3 (TO-236)
Jumlah Pin — 3
Status RoHS — Compliant (per onsemi product page)
AEC-Q101 Qualified — Yes (per datasheet)

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