2N7002LT1G vs MMBF170LT1 比較
詳細並排比較 2N7002LT1G 由 onsemi 與 MMBF170LT1 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 2N7002LT1G | MMBF170LT1 |
|---|---|---|
| 品牌 | onsemi | onsemi |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | N-Channel |
| Channel Mode | Enhancement Mode | — |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | — |
| 封裝 | SOT-23-3 (TO-236) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 | — |
| 類別 | Small Signal MOSFET | — |
| Technology | MOSFET | DMOS |
| Manufacturer | onsemi (ON Semiconductor) | onsemi (ON Semiconductor) |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | -55 °C to +150 °C (TJ max per datasheet) |
| Packaging | [DATA_NEEDED: packaging type] | — |
| Part Number | — | MMBF170LT1 |
| 電晶體類型 | — | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage (VDSS) | — | 60 V |
| Drain-Gate Voltage (VDGS) | — | 60 Vdc |
| Gate-Source Voltage - Continuous (VGS) | — | ±20 Vdc (per datasheet) |
| Gate-Source Voltage - Non-repetitive (VGSM) | — | ±40 Vpk (tp <= 50 ms) |
| Continuous Drain Current (ID) | — | 500 mA (Ta) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value] |
| Total Device Dissipation (PD) | — | 225 mW (Ta, FR-5 board) |
| 封裝 / 外殼 | — | SOT-23-3 (TO-236) |
| 腳位數 | — | 3 |
| RoHS 狀態 | — | Compliant (per onsemi product page) |
| AEC-Q101 Qualified | — | Yes (per datasheet) |