2N7002LT1G vs MMBF170LT1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2N7002LT1G disebabkan oleh onsemi dan MMBF170LT1 disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2N7002LT1G MMBF170LT1
Merek onsemi onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel N-Channel
Channel Mode Enhancement Mode —
Drain-Source Voltage VDSS 60 V —
Continuous Drain Current ID 115 mA (Tc) —
Power Dissipation PD 225 mW (Ta) —
Maximum RDS(on) 7.5 ohm @ VGS = 5 V —
Configuration Single FET —
Kemasan SOT-23-3 (TO-236) —
Jenis Pemasangan Surface Mount Surface Mount
Bilangan Pin 3 —
Kategori Small Signal MOSFET —
Technology MOSFET DMOS
Manufacturer onsemi (ON Semiconductor) onsemi (ON Semiconductor)
Lead Finish [DATA_NEEDED: lead finish/plating] —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] -55 °C to +150 °C (TJ max per datasheet)
Packaging [DATA_NEEDED: packaging type] —
Part Number — MMBF170LT1
Jenis Transistor — N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDSS) — 60 V
Drain-Gate Voltage (VDGS) — 60 Vdc
Gate-Source Voltage - Continuous (VGS) — ±20 Vdc (per datasheet)
Gate-Source Voltage - Non-repetitive (VGSM) — ±40 Vpk (tp <= 50 ms)
Continuous Drain Current (ID) — 500 mA (Ta)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Total Device Dissipation (PD) — 225 mW (Ta, FR-5 board)
Kemasan / Case — SOT-23-3 (TO-236)
Kiraan Pin — 3
Status RoHS — Compliant (per onsemi product page)
AEC-Q101 Qualified — Yes (per datasheet)

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